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Título
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
Autor(es)
Materia
Nanodevices
Terahertz
GaN
Clasificación UNESCO
22 Física
Fecha de publicación
2013
Citación
Journal of Applied Physics 113, 034305 (2013)
Resumen
The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called Self Switching Diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W is obtained at 0.3 THz with a 280 pW/sqrt(Hz) Noise Equivalent Power.
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