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dc.contributor.authorKaushal, Vikas
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorLee, Bongmook
dc.contributor.authorMisra, Veena
dc.contributor.authorMargala, Martin
dc.identifier.citationKaushal, V. et al. (2012).Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors. IEEE Electron Device Letters 33, 1120-1122.es_ES
dc.description.abstractThis letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows a strong dependence on the dielectric permittivity of the material filling the etched trenches. The transconductance of the BDT is enhanced and shifted to lower gate bias when the Al2O3 is deposited in the trenches. Moreover, the ratio between output and leakage currents was also enhanced.es_ES
dc.description.sponsorshipROOTHz (FP7-243845)es_ES
dc.description.sponsorshipNSF/Directorate for Engineering/Division of Electrical, Communications & Cyber Systems. Project Code: 0609140
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.subjectMonte Carlo methodes_ES
dc.subjectBallistic transportes_ES
dc.titleEffects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistorses_ES
dc.subject.unesco22 Físicaes_ES

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Attribution-NonCommercial-NoDerivs 3.0 Unported
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Unported