Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors

Abstract

This letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows a strong dependence on the dielectric permittivity of the material filling the etched trenches. The transconductance of the BDT is enhanced and shifted to lower gate bias when the Al2O3 is deposited in the trenches. Moreover, the ratio between output and leakage currents was also enhanced.