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dc.contributor.authorPardo Santos, Diego
dc.contributor.authorGrajal de la Fuente, Jesús
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorMateos López, Javier 
dc.date.accessioned2013-09-04T11:13:18Z
dc.date.available2013-09-04T11:13:18Z
dc.date.issued2012
dc.identifier.citationPardo, D. et al. (2012). Analysis of nonharmonic oscillations in Schottky diodes. Journal of Applied Physics 112, Art. No. 053703 [1-9].es_ES
dc.identifier.issn0021-8979
dc.identifier.urihttp://hdl.handle.net/10366/122115
dc.description.abstract[EN]We investigate damped nonharmonic oscillations at terahertz frequencies observed in the current response of Schottky diodes simulated with the Monte Carlo method under applied signals of a few hundred GHz. From Monte Carlo simulations of different diode structures, two kinds of nonharmonic oscillations have been identified. The first kind of oscillations is due to the coupling of the nonlinear performance of the Schottky junction with the inertial motion of the carriers in the non-depleted region of the epilayer. The second kind of oscillations is due to the modulation of the n+–n junction when high electric fields are induced in the non-depleted region of the epilayer. These oscillations constitute a promising mechanism for THz signal generation.es_ES
dc.description.sponsorshipROOTHz (FP7-243845)es_ES
dc.language.isoenges_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectSchottky diodeses_ES
dc.subjectMonte Carlo methodes_ES
dc.subjectGaNes_ES
dc.titleAnalysis of nonharmonic oscillations in Schottky diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publishversionhttps://doi.org/10.1063/1.4747938
dc.subject.unesco22 Físicaes_ES
dc.identifier.doi10.1063/1.4747938
dc.relation.projectIDEC/FP7/SP1/ICT/243845
dc.relation.projectIDEC/FP7/SP1/SPA/242334
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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