Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

Abstract

The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Schottky barrier diodes operating under static and time varying conditions. We show the influence of the structure of the diode and working regimes on the noise spectrum of the diodes. Besides, the paper evaluates the capabilities of published analytical models to describe the noise spectra in Schottky diodes under time varying conditions. This is a further step towards the development of a design tool that integrates both the electrical response and the intrinsic noise generated in the devices.