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dc.contributor.authorRodilla, Helena
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorMoschetti, Giuseppe
dc.contributor.authorGrahn, Jan
dc.contributor.authorMateos López, Javier 
dc.date.accessioned2013-10-04T11:39:09Z
dc.date.available2013-10-04T11:39:09Z
dc.date.issued2010
dc.identifier.citationRodilla, H. et al. (2010). Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs. Semicond. Sci Technol. 26, 025004.es_ES
dc.identifier.urihttp://hdl.handle.net/10366/122189
dc.description.abstractIn this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, ns, has been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cut-off frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of ns shifts the maximum of the transconductance and intrinsic cut-off frequency to higher values of drain current and improves the agreement with the experimental results.es_ES
dc.description.sponsorshipROOTHz (FP7-243845)es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectInAs HEMTses_ES
dc.subjectMonte Carlo methodes_ES
dc.titleDynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.subject.unesco22 Física
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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Attribution-NonCommercial-NoDerivs 3.0 Unported
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Unported