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dc.contributor.author | Rodilla, Helena | |
dc.contributor.author | González Sánchez, Tomás | |
dc.contributor.author | Moschetti, Giuseppe | |
dc.contributor.author | Grahn, Jan | |
dc.contributor.author | Mateos López, Javier | |
dc.date.accessioned | 2013-10-04T11:39:09Z | |
dc.date.available | 2013-10-04T11:39:09Z | |
dc.date.issued | 2010 | |
dc.identifier.citation | Rodilla, H. et al. (2010). Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs. Semicond. Sci Technol. 26, 025004. | es_ES |
dc.identifier.uri | http://hdl.handle.net/10366/122189 | |
dc.description.abstract | In this work, by means of Monte Carlo simulations, the static and dynamic behavior of isolated-gate InAs/AlSb high electron mobility transistors (Sb-HEMTs) has been studied and compared with experimental results. The influence of the existence of a native oxide under the gate, the value of the surface charges in the gate recess and the possible variation of electron sheet carrier density, ns, has been studied. A decrease in the gate-source capacitance, transconductance and intrinsic cut-off frequency is observed because of the presence of the native oxide, while changes in the value of the surface charges in the recess only introduce a threshold voltage shift. The increase of ns shifts the maximum of the transconductance and intrinsic cut-off frequency to higher values of drain current and improves the agreement with the experimental results. | es_ES |
dc.description.sponsorship | ROOTHz (FP7-243845) | es_ES |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivs 3.0 Unported | |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-nd/3.0/ | |
dc.subject | InAs HEMTs | es_ES |
dc.subject | Monte Carlo method | es_ES |
dc.title | Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.subject.unesco | 22 Física | |
dc.rights.accessRights | info:eu-repo/semantics/openAccess |