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Título
Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes
Autor(es)
Materia
Gunn diodes
Monte Carlo method
InP
GaN
Terahertz
Fecha de publicación
2014
Editor
American Institute of Physics
Citación
S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes Journal of Applied Physics 115, 044510 [1-7] (2014)
Resumen
In this work, we report on Monte Carlo simulations to study the capability to generate Gunn
oscillations of diodes based on InP and GaN with around 1 lm active region length. We compare
the power spectral density of current sequences in diodes with and without notch for different
lengths and two doping profiles. It is found that InP structures provide 400 GHz current oscillations
for the fundamental harmonic in structures without notch and around 140 GHz in notched diodes.
On the other hand, GaN diodes can operate up to 300 GHz for the fundamental harmonic, and
when the notch is effective, a larger number of harmonics, reaching the Terahertz range, with
higher spectral purity than in InP diodes are generated. Therefore, GaN-based diodes offer a high
power alternative for sub-millimeter wave Gunn oscillations.
URI
DOI
http://dx.doi.org/10.1063/1.4863399
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- GINEAF. Artículos [85]