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Título
Phonon black-body radiation limit for heat dissipation in electronics
Autor(es)
Palabras clave
Heat disippation
Noise
HEMT
Black-body radiation
Fecha de publicación
2015
Editor
Nature Publishing Group
Citación
J. Schleeh, J. Mateos, I. Íñiguez-de-la-Torre, N. Wadefalk, P. A. Nilsson, J. Grahn and A. J. Minnich; Phonon balck-body radiation limit for heat dissipation in electronics; Nature Materials 14, 187-192 (2015)
Abstract
Thermal dissipation at the active region of electronic devices
is a fundamental process of considerable importance1–3.
Inadequate heat dissipation can lead to prohibitively large
temperature rises that degrade performance4–7, and intensive
e orts are under way to mitigate this self-heating8–12. At
room temperature, thermal resistance is due to scattering,
often by defects and interfaces in the active region, that
impedes the transport of phonons. Here, we demonstrate
that heat dissipation in widely used cryogenic electronic
devices13–16 instead occurs by phonon black-body radiation
with the complete absence of scattering, leading to large
self-heating at cryogenic temperatures and setting a key limit
on the noise floor. Our result has important implications for the
many fields that require ultralow-noise electronic devices.
URI
DOI
10.1038/NMAT4126
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