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Nonequilibrium transport in GaAs Schottky mixers at 2.5 THz
dc.contributor.authorPardo Santos, Diego
dc.contributor.authorGrajal de la Fuente, Jesús
dc.contributor.authorPérez Santos, María Susana 
dc.date.accessioned2016-10-04T07:53:09Z
dc.date.available2016-10-04T07:53:09Z
dc.date.issued2015
dc.identifier.citationD Pardo, J Grajal, and S Pérez; Nonequilibrium transport in GaAs Schottky mixers at 2.5 THz; Journal of Physics: Conference Series 647, 012038 [1-4] (2015)es_ES
dc.identifier.urihttp://hdl.handle.net/10366/130649
dc.description.abstractThis work presents an analysis of the electrical and the noise performances of a 2.5 THz mixer. Reliable and self-consistent simulations of the circuit are carried out by means of a Monte Carlo model of the diode coupled to a harmonic balance technique. Simulations with this tool have shown that hot electrons and intervalley transitions can highly degrade the performance of this mixer. Additionally, these phenomena can be mitigated by decreasing the epilayer length of the diode.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectSchottky diodeses_ES
dc.subjectMixerses_ES
dc.subjectGaAses_ES
dc.subjectHarmonic balancees_ES
dc.titleNonequilibrium transport in GaAs Schottky mixers at 2.5 THzes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1088/1742-6596/647/1/012038
dc.relation.projectIDTEC2013-41640-Res_ES
dc.relation.projectIDSA052U13es_ES
dc.relation.projectIDTEC2011-28683-C02-01es_ES
dc.relation.projectIDS2013/ICE-3000es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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