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dc.contributor.authorTalbo, Vincent
dc.contributor.authorMateos López, Javier 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorLechaux, Yoann 
dc.contributor.authorWichmann, Nicolas
dc.contributor.authorBollaert, Sylvain
dc.contributor.authorGarcía Vasallo, Beatriz
dc.identifier.citationV. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo; Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs; Journal of Physics: Conference Series 647, 012056 [1-4] (2015)es_ES
dc.description.abstractImpact-ionization metal-oxide-semiconductor FETs (I-MOSFETs) are in competition with tunnel FETs (TFETs) in order to achieve the best behaviour for low power logic circuits. Concretely, III-V I-MOSFETs are being explored as promising devices due to the proper reliability, since the impact ionization events happen away from the gate oxide, and the high cutoff frequency, due to high electron mobility. To facilitate the design process from the physical point of view, a Monte Carlo (MC) model which includes both impact ionization and band-to-band tunnel is presented. Two ungated InGaAs and InAlAs/InGaAs 100 nm PIN diodes have been simulated. In both devices, the tunnel processes are more frequent than impact ionizations, so that they are found to be appropriate for TFET structures and not for I-MOSFETs. According to our simulations, other narrow bandgap candidates for the III-V heterostructure, such as InAs or GaSb, and/or PININ structures must be considered for a correct I-MOSFET design.es_ES
dc.publisherInstitute of Physics Publishinges_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.subjectMonte Carlo methodes_ES
dc.subjectTunnel FETes_ES
dc.titleMonte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETses_ES

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