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dc.contributor.authorGarcía Pérez, Óscar Alberto
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorAlimi, Yasaman
dc.contributor.authorSong, Aimin M.
dc.date.accessioned2016-10-05T15:58:55Z
dc.date.available2016-10-05T15:58:55Z
dc.date.issued2015
dc.identifier.citationÓ. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González; Anomalous low-frequency noise Increase at the onset of oscillations in Gunn diodes; 2015 10th Spanish Conference on Electron Devices; DOI: 10.1109/CDE.2015.7087504es_ES
dc.identifier.urihttp://hdl.handle.net/10366/130678
dc.description.abstractIn this work, the presence of anomalous lowfrequency noise effects in Gunn diodes has been studied and evidenced. Near the onset of Gunn instability, there is a limited range of bias voltages for which the noise significantly increases at frequencies well below the frequency of oscillation. For higher bias voltages, the oscillation becomes purer and such low-frequency noise drastically vanishes.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectNoisees_ES
dc.subjectGunn oscillationses_ES
dc.titleAnomalous Low-Frequency Noise Increase at the Onset of Oscillations in Gunn Diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1109/CDE.2015.7087504
dc.relation.projectIDTEC2013-41640-Res_ES
dc.relation.projectIDSA052U13es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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