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dc.contributor.authorTalbo, Vincent
dc.contributor.authorMateos López, Javier 
dc.contributor.authorRetailleau, Sylvie
dc.contributor.authorDollfus, Philippe
dc.contributor.authorGonzález Sánchez, Tomás 
dc.date.accessioned2016-10-05T16:00:23Z
dc.date.available2016-10-05T16:00:23Z
dc.date.issued2015
dc.identifier.urihttp://hdl.handle.net/10366/130680
dc.description.abstractIn this work, we investigate and explain the timedependent behavior of shot noise in Silicon quantum dot-based double-tunnel junctions by means of a three-dimensional selfconsistent simulation and a Monte-Carlo algorithm following the time evolution of the system. We demonstrate the strong link between autocorrelation functions and electron waiting time distributions, i.e, the time between two consecutive tunnel events through a given junction. Moreover, we separate and analyze the contribution of each different path - evolution of the number of electrons in the quantum dot between two consecutive tunnel events through the same junction - to understand clearly the behavior of auto-correlations and waiting time distributions in the case of a 3-state system.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoeng
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectShot noisees_ES
dc.subjectDouble-tunnel junctiones_ES
dc.titleTime-dependent physics of double-tunnel junctionses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1109/CDE.2015.7087477
dc.relation.projectIDTEC2013-41640-Res_ES
dc.relation.projectIDSA052U13es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccess


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Attribution-NonCommercial-NoDerivs 3.0 Unported
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivs 3.0 Unported