Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

Abstract

In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the recess may affect the propagation statistics of the carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired effects from the accesses and contact resistances. The presented results are provided as a starting point for a future de-embedding process to precisely determine the actual noise properties below the recess.