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Geometry and bias dependence of trapping effects in planar GaN nanodiodes
dc.contributor.authorSánchez Martín, Héctor 
dc.contributor.authorGarcía Pérez, Óscar Alberto
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorMateos López, Javier 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorGaquiere, Christophe
dc.date.accessioned2017-07-26T07:44:30Z
dc.date.available2017-07-26T07:44:30Z
dc.date.issued2017
dc.identifier.citationH. Sánchez-Martín, O. García-Pérez, I. Íñiguez-de-la- Torre, S. Pérez, J. Mateos, T. González, and C. Gaquiere; Geometry and bias dependence of trapping effects in planar GaN nanodiodes; 2017 Spanish Conference on Electron Devices, CDE 2017; DOI: 10.1109/CDE.2017.7905246es_ES
dc.identifier.urihttp://hdl.handle.net/10366/133422
dc.description.abstract[EN]Pulsed and transient measurements performed in planar nanodiodes fabricated on an AlGaN/GaN heterolayer reveal the influence of surface and bulk traps on the I-V characteristic and AC impedance. Rectangular and V-shape diodes of different lengths and widths have been measured. Surface trapping effects become relevant in narrow channels, as the surface to volume ratio of the device is increased, while in wider rectangular and V-shape diodes bulk trapping effects prevail.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectTrapses_ES
dc.subjectGaN nanodiodeses_ES
dc.subjectPulse and transient measurementses_ES
dc.titleGeometry and bias dependence of trapping effects in planar GaN nanodiodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publishversionhttps://doi.org/10.1109/CDE.2017.7905246
dc.identifier.doi10.1109/CDE.2017.7905246
dc.relation.projectIDTEC2013-41640-Res_ES
dc.relation.projectIDSA022U16es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES


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