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dc.contributor.authorLuan, Qingfang
dc.contributor.authorJia, Yuechen
dc.contributor.authorWang, Yutian
dc.contributor.authorAkhmadaliev, Shavkat
dc.contributor.authorZhou, Shengqiang
dc.contributor.authorVázquez de Aldana, Javier R. 
dc.contributor.authorTan, Yang
dc.contributor.authorChen, Feng
dc.date.accessioned2021-06-02T07:04:36Z
dc.date.available2021-06-02T07:04:36Z
dc.date.issued2014-06
dc.identifier.citationQingfang Luan, Yuechen Jia, Yutian Wang, Shavkat Akhmadaliev, Shengqiang Zhou, Javier R. Vázquez de Aldana, Yang Tan, and Feng Chen, "Optical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablation," Opt. Mater. Express 4, 1166-1171 (2014)es_ES
dc.identifier.urihttp://hdl.handle.net/10366/146639
dc.description.abstractOptical ridge waveguides were fabricated in 4H-SiC single crystal by combination of 15 MeV C5+ ion irradiation and femtosecond laser ablation. The near-field modal intensity distributions exhibit the well-confined light propagation in the waveguides. A propagation loss as low as 5.1 dB/cm has been achieved at 632.8 nm for the ridge waveguide. The investigation of confocal micro-Raman spectra suggests partial transition of 4H-SiC to 6H-SiC in the irradiated regiones_ES
dc.description.sponsorshipThe work was carried out under the support by National Natural Science Foundation of China (No. U1332121) and the 973 Project (No. 2010CB832906) of China. The work was also supported by the Helmholz-Gemeinschaft Deutscher Forschungszentren (HGF-VH-NG-713) and Junta de Castilla y León (Project SA086A12-2).es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectEffective refractive indexes_ES
dc.subjectElectric fieldses_ES
dc.subjectLaser ablationes_ES
dc.subjectLight propagationes_ES
dc.subjectPlanar waveguideses_ES
dc.subjectRaman scatteringes_ES
dc.titleOptical ridge waveguides in 4H-SiC single crystal produced by combination of carbon ion irradiation and femtosecond laser ablationes_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1364/OME.4.001166
dc.relation.projectIDProject SA086A12-2es_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.essn2159-3930
dc.journal.titleOptical Materials Expresses_ES
dc.volume.number4es_ES
dc.issue.number6es_ES
dc.page.initial1166es_ES
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
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