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Título
Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
Autor(es)
Materia
Gunn effect
Planar Gunn diodes
InGaAs
Clasificación UNESCO
2203 Electrónica
Fecha de publicación
2021
Editor
IEEE
Citación
Novoa-López, J.A. et al. (2021). Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes. IEEE Electron Device Letters, 42 (8), pp. 1136-1139. doi: 10.1109/LED.2021.3093855
Resumen
[EN]Planar Gunn diodes on In0.53Ga0.47 As with lengths between 2 and 5 μm have been fabricated and characterized in a temperature range of 10 to 300 K. Two different oscillation regimes are observed depending on temperature. At the higher values, the frequency of the oscillations decreases as the bias increases, as expected for a well-established transit-time domain mode. But below approximately 75 K, the behavior is the opposite, the frequency of the Gunn oscillations increases with the bias. This fact, together with a much lower amplitude of the oscillations, indicate the possible switch to a different oscillation mode in which the domains are not able to attain their complete maturation before reaching the anode.
URI
ISSN
0741-3106
DOI
10.1109/LED.2021.3093855
Versión del editor
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- GINEAF. Artículos [85]