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dc.contributor.authorPérez Martín, Elsa 
dc.contributor.authorÍñiguez de la Torre Mulas, Ignacio 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorGaquière, Christophe
dc.contributor.authorMateos López, Javier 
dc.date.accessioned2021-09-13T09:55:36Z
dc.date.available2021-09-13T09:55:36Z
dc.date.issued2021
dc.identifier.citationPérez-Martín, E., Íñiguez-de-la-Torre, I., González, T., Gaquière, C. and Mateos, J. (2021). Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes. 2021 13th Spanish Conference on Electron Devices (CDE), pp. 90-93, doi: 10.1109/CDE52135.2021.9455737.es_ES
dc.identifier.urihttp://hdl.handle.net/10366/147144
dc.description.abstract[EN]In this work, with the help of a semi-classical twodimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary.es_ES
dc.description.sponsorshipSpanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectMonte Carlo simulationes_ES
dc.subjectSelf-switching diodeses_ES
dc.subjectGallium Nitridees_ES
dc.subjectSurface effectses_ES
dc.titleBias-dependence of surface charge at low temperature in GaN Self-Switching Diodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1109/CDE52135.2021.9455737
dc.relation.projectIDSA254P18es_ES
dc.relation.projectIDTEC2017-83910-Res_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.journal.title2021 13th Spanish Conference on Electron Devices (CDE)es_ES
dc.page.initial90es_ES
dc.page.final93es_ES
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internacional