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dc.contributor.author | Pérez Martín, Elsa | |
dc.contributor.author | Íñiguez de la Torre Mulas, Ignacio | |
dc.contributor.author | González Sánchez, Tomás | |
dc.contributor.author | Gaquiere, Christophe | |
dc.contributor.author | Mateos López, Javier | |
dc.date.accessioned | 2021-09-13T09:55:36Z | |
dc.date.available | 2021-09-13T09:55:36Z | |
dc.date.issued | 2021 | |
dc.identifier.citation | Pérez-Martín, E., Íñiguez-de-la-Torre, I., González, T., Gaquière, C. and Mateos, J. (2021). Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes. 2021 13th Spanish Conference on Electron Devices (CDE), pp. 90-93, doi: 10.1109/CDE52135.2021.9455737. | es_ES |
dc.identifier.uri | http://hdl.handle.net/10366/147144 | |
dc.description.abstract | [EN]In this work, with the help of a semi-classical twodimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary. | es_ES |
dc.description.sponsorship | Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18 | es_ES |
dc.format.mimetype | application/pdf | |
dc.language.iso | eng | es_ES |
dc.publisher | IEEE | es_ES |
dc.rights | Attribution-NonCommercial-NoDerivatives 4.0 Internacional | * |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-nd/4.0/ | * |
dc.subject | Monte Carlo simulation | es_ES |
dc.subject | Self-switching diodes | es_ES |
dc.subject | Gallium Nitride | es_ES |
dc.subject | Surface effects | es_ES |
dc.title | Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes | es_ES |
dc.type | info:eu-repo/semantics/article | es_ES |
dc.identifier.doi | 10.1109/CDE52135.2021.9455737 | |
dc.relation.projectID | SA254P18 | es_ES |
dc.relation.projectID | TEC2017-83910-R | es_ES |
dc.rights.accessRights | info:eu-repo/semantics/openAccess | es_ES |
dc.journal.title | 2021 13th Spanish Conference on Electron Devices (CDE) | es_ES |
dc.page.initial | 90 | es_ES |
dc.page.final | 93 | es_ES |
dc.type.hasVersion | info:eu-repo/semantics/publishedVersion | es_ES |
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