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dc.contributor.authorOrfao, B.
dc.contributor.authorGarcía Vasallo, Beatriz 
dc.contributor.authorMoro-Melgar, Diego
dc.contributor.authorZaknoune, M.
dc.contributor.authorGioia, G. Di
dc.contributor.authorSamnouni, M.
dc.contributor.authorPérez Santos, María Susana 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorMateos López, Javier 
dc.date.accessioned2021-09-14T08:21:16Z
dc.date.available2021-09-14T08:21:16Z
dc.date.issued2021
dc.identifier.urihttp://hdl.handle.net/10366/147145
dc.description.abstract[EN]Schottky barrier diodes (SBDs) with realistic geometries have been studied by means of a 2-D ensemble Monte Carlo simulator. The non-linearity of the Capacitance-Voltage (C-V) characteristic is the most important parameter for optimizing SBDs as frequency multipliers. In this paper, by changing the values of several technological parameters, we analyze their influence on the edge fringing capacitance in a GaN SBD. We have found that the parameters related with the dielectric used for the passivation and the lateral extension of the epilayer significantly affect the fringing capacitance, thus increasing the value of the total capacitance above the ideal one.es_ES
dc.description.sponsorshipSpanish MINECO and FEDER under Project TEC2017-83910-R and Junta de Castilla y León and FEDER under Project SA254P18es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.rightsAttribution-NonCommercial-NoDerivatives 4.0 Internacional*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/4.0/*
dc.subjectEdge effectses_ES
dc.subjectMonte Carloes_ES
dc.subjectSchottky barrier diodeses_ES
dc.subjectPermitivityes_ES
dc.subjectDielectrices_ES
dc.subjectFringing capacitancees_ES
dc.titleTechnological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulationses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.relation.publishversionhttps://doi.org/10.1109/CDE52135.2021.9455727es_ES
dc.subject.unesco2203 Electrónicaes_ES
dc.identifier.doi10.1109/CDE52135.2021.9455727
dc.relation.projectIDSA254P18es_ES
dc.relation.projectIDTEC2017-83910-Res_ES
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.journal.title2021 13th Spanish Conference on Electron Devices (CDE)es_ES
dc.page.initial94es_ES
dc.page.final97es_ES
dc.type.hasVersioninfo:eu-repo/semantics/publishedVersiones_ES


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Attribution-NonCommercial-NoDerivatives 4.0 Internacional
Except where otherwise noted, this item's license is described as Attribution-NonCommercial-NoDerivatives 4.0 Internacional