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dc.contributor.authorSergio, García Sánchez 
dc.contributor.authorÍñiguez de la Torre Mulas, Ignacio 
dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorMateos López, Javier 
dc.date.accessioned2024-09-02T07:26:15Z
dc.date.available2024-09-02T07:26:15Z
dc.date.issued2024
dc.identifier.citationS. García-Sánchez, I. Íñiguez-de-la-Torre, T. González and J. Mateos, "Hybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effects," in IEEE Transactions on Electron Devices, doi: 10.1109/TED.2024.3438120. keywords: {Computational modeling;Artificial neural networks;Predictive models;Lattices;Semiconductor process modeling;Current density;Training;Artificial intelligence (AI);artificial neural networks (ANNs);electronic devices;gallium nitride (GaN);Monte Carlo simulations;thermal models},es_ES
dc.identifier.issn0018-9383
dc.identifier.urihttp://hdl.handle.net/10366/159400
dc.description.abstract[EN]This article presents a hybrid artificial intelligence (AI)-thermal model for the determination of the current and lattice temperature of a device under a given bias voltage. The model is based on a neural network trained with isothermal Monte Carlo simulations and the coupling of any thermal model where the lattice temperature depends on the dissipated power. The proposed procedure has been validated on a gallium nitride (GaN)-based self-switching diode, although its application to other electronic devices, such as transistors, is also straightforward. The proposed method allows for a significant reduction in computational cost, in addition to enabling the investigation of various thermal models in an efficient manner. It is capable of reproducing the results that would be obtained through electrothermal Monte Carlo simulations, which are particularly computationally expensive.es_ES
dc.format.mimetypeapplication/pdf
dc.language.isoenges_ES
dc.publisherIEEEes_ES
dc.titleHybrid AI-Thermal Model Trained via Monte Carlo Simulations to Study Self-Heating Effectses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.identifier.doi10.1109/TED.2024.3438120
dc.rights.accessRightsinfo:eu-repo/semantics/openAccesses_ES
dc.identifier.essn1557-9646
dc.journal.titleIEEE Transactions on Electron Deviceses_ES
dc.page.initial1es_ES
dc.page.final0es_ES
dc.type.hasVersioninfo:eu-repo/semantics/draftes_ES


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