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dc.contributor.authorÍñiguez de la Torre Mulas, Ignacio es_ES
dc.contributor.authorMateos López, Javier es_ES
dc.contributor.authorPardo Collantes, Danieles_ES
dc.contributor.authorGonzález Sánchez, Tomás es_ES
dc.date.accessioned2009-01-27es_ES
dc.date.accessioned2009-10-15T08:53:59Z
dc.date.available2009-10-15T08:53:59Z
dc.date.issued2008es_ES
dc.identifier.citationÍñiguez de la Torre Mulas, I., Mateos López, J., Pardo Collantes, D., González Sánchez, T. (2008). Monte Carlo analysis of noise spectra in self-switching nanodiodes."Journal of Applied Physics", 103.es_ES
dc.identifier.urihttp://hdl.handle.net/10366/55882es_ES
dc.identifier.urihttp://hdl.handle.net/10366/55882
dc.descriptionEspectros del ruido en nanodiodos.es_ES
dc.description.abstractBy means of a semiclassical two-dimensional Monte Carlo technique, we analyze current noise spectra of InAlAs/InGaAs-based submicron self-switching diodes. Shot noise (at low bias) and diffusion noise in the series resistance (at high bias) are found to dominate the current noise at lowfrequency (in the plateau beyond the 1/ f range). Two peaks of different origins, which may limit the device performance, are found in the noise spectra at higher frequencies. The dependence of theamplitude and frequency of these peaks on the topology of the diodes is analyzed and discussed. Design indications to improve the noise performance of the devices are provided.es_ES
dc.format.extent6 p.es_ES
dc.format.mimetypeapplication/pdfes_ES
dc.languageIngléses_ES
dc.language.isoenges_ES
dc.publisherAmerican Institute of Physics (Nueva York, Estados Unidos)es_ES
dc.relation.requiresAdobe Acrobates_ES
dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/
dc.subjectRuidoes_ES
dc.subjectMonte-Carlo, Método dees_ES
dc.subjectElectronic noisees_ES
dc.subjectShot noisees_ES
dc.titleMonte Carlo analysis of noise spectra in self-switching nanodiodeses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES


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