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dc.contributor.authorGonzález Sánchez, Tomás 
dc.contributor.authorÍñiguez-de-la-Torre, Ignacio
dc.contributor.authorPardo Collantes, Daniel
dc.contributor.authorMateos López, Javier
dc.identifier.citationGonzález Sánchez, T., Íniguez de la Torre, I., Pardo Collantes, D., y Mateos López, J. (2009). Gunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulations. En 33th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2009).es_ES
dc.description.abstract[EN]By means of Monte Carlo simulations we show the feasibility of asymmetric nonlinear planar nanodiodes for the development of Gunn oscillations. For channel lengths about 1 micron, oscillation frequencies around 100 GHz are predicted in InGaAs diodes, being significantly higher, around 400 GHz, in the case of GaN structures. By simulating two diodes in parallel, we analyze the possible improvement/loss of efficiency due to the coupling between adjacent oscillating channels and the dispersion in the channel lengths.en
dc.description.abstract[ES] Por medio de simulaciones Monte Carlo mostramos la posibilidad de conseguir oscilaciones Gunn en nanodiodos planares asimetricos. Para longitudes del canal de 1 micra se encuentran frecuencias de oscilacion de alrededor de 100 GHz en diodos de InGaAs, y mucho mas altas, alrededor de 400 GHz, en el caso de estructuras de GaN. Simulando dos diodos en paralelo, en esta contribución hemos analizado la posible perdida/ganancia de eficiencia debida al acoplamiento entre los canales adyacentes y a la dispersión en la longitud de los
dc.description.sponsorshipUniversidad de Málaga (Málaga, España)es
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dc.rightsAttribution-NonCommercial-NoDerivs 3.0 Unported
dc.subjectSelf switching diodesen_EN
dc.subjectGunn oscillationsen_EN
dc.subjectMonte Carlo methoden_EN
dc.subjectTerahertz devicesen_EN
dc.subjectEfecto Gunnes_ES
dc.titleGunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulationses_ES

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