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2014Frequency-dependent shot noise in single-electron devicesTalbo, Vincent; Mateos López, Javier; Retailleau, Sylvie; Dollfus, Philippe; González Sánchez, Tomásinfo:eu-repo/semantics/article2016-09-30T08:18:45Z; 2016-09-30T08:18:45Z; 2014
2018Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysisGarcía Vasallo, Beatriz; González Sánchez, Tomás; Talbo, Vincent; Lechaux, Yoann; Wichmann, Nicola; Bollaert, Sylvain; Mateos López, Javierinfo:eu-repo/semantics/article2018-07-10T10:24:56Z; 2018-07-10T10:24:56Z; 2018
2015Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETsTalbo, Vincent; Mateos López, Javier; González Sánchez, Tomás; Lechaux, Y.; Wichmann, Nicolas; Bollaert, Sylvain; García Vasallo, Beatrizinfo:eu-repo/semantics/article2016-10-04T08:00:00Z; 2016-10-04T08:00:00Z; 2015
2015Time-dependent physics of double-tunnel junctionsTalbo, Vincent; Mateos López, Javier; Retailleau, Sylvie; Dollfus, Philippe; González Sánchez, Tomásinfo:eu-repo/semantics/article2016-10-05T16:00:23Z; 2016-10-05T16:00:23Z; 2015
2015Time-dependent shot noise in multi-level quantum dot-based single-electron devicesTalbo, Vincent; Mateos López, Javier; Retailleau, Sylvie; Dollfus, Philippe; González Sánchez, Tomásinfo:eu-repo/semantics/article2016-10-04T07:52:03Z; 2016-10-04T07:52:03Z; 2015