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Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors: Profile on PlumX
Título : Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors
Autor(es) : Kaushal, Vikas
Íñiguez-de-la-Torre, Ignacio
González Sánchez, Tomás
Mateos López, Javier
Lee, Bongmook
Misra, Veena
Margala, Martin
Palabras clave : Nanodevices
Monte Carlo method
Ballistic transport
Clasificación UNESCO: Materias::Investigación::22 Física
Fecha de publicación : 2012
Citación : Kaushal, V. et al. (2012).Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors. IEEE Electron Device Letters 33, 1120-1122.
Resumen : This letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows a strong dependence on the dielectric permittivity of the material filling the etched trenches. The transconductance of the BDT is enhanced and shifted to lower gate bias when the Al2O3 is deposited in the trenches. Moreover, the ratio between output and leakage currents was also enhanced.
URI : http://hdl.handle.net/10366/122106
ISSN : 0741-3106
Aparece en las colecciones: DFA. Artículos del Departamento de Física Aplicada

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