Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122106
Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors: Profile on PlumX
Title: Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors
Authors: Kaushal, Vikas
Íñiguez-de-la-Torre, Ignacio
González Sánchez, Tomás
Mateos López, Javier
Lee, Bongmook
Misra, Veena
Margala, Martin
Keywords: Nanodevices
Monte Carlo method
Ballistic transport
Issue Date: 2012
Citation: Kaushal, V. et al. (2012).Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors. IEEE Electron Device Letters 33, 1120-1122.
Abstract: This letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows a strong dependence on the dielectric permittivity of the material filling the etched trenches. The transconductance of the BDT is enhanced and shifted to lower gate bias when the Al2O3 is deposited in the trenches. Moreover, the ratio between output and leakage currents was also enhanced.
URI: http://hdl.handle.net/10366/122106
ISSN: 0741-3106
Appears in Collections:Documentos OpenAire (Open Access Infrastructure for Research in Europe)
DFA. Artículos del Departamento de Física Aplicada

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