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Searching for THz Gunn oscillations in GaN planar nanodiodes: Profile on PlumX
Título : Searching for THz Gunn oscillations in GaN planar nanodiodes
Autor(es) : Íñiguez de la Torre, Ana
Íñiguez-de-la-Torre, Ignacio
Mateos López, Javier
González Sánchez, Tomás
Sangaré, Paul
Faucher, Marc
Grimbert, Bertrand
Brandli, Virginie
Ducournau, Guillaume
Gaquière, Christophe
Palabras clave : Nanodevices
Monte Carlo method
GaN nanodiodes
Gunn oscillations
Fecha de publicación : 2012
Citación : Íñiguez de la Torre, A. et al. (2012). Searching for THz Gunn oscillations in GaN planar nanodiodes. Journal of Applied Physics 111, 113705.
Resumen : A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some simulation parameters in the diodes has been made. Oscillation frequencies of hundreds of GHz are predicted by the simulations in diodes with micrometric channel lengths. Following simulation guidelines, a first batch of diodes was fabricated. It was found that surface charge depletion effects are stronger than expected and inhibit the onset of the oscillations. Indeed, a simple standard constant surface charge model is not able to reproduce experimental measurements and a self-consistent model must be included in the simulations. Using a self-consistent model, it was found that to achieve oscillations, wider channels and improved geometries are necessary.
URI : http://hdl.handle.net/10366/122107
Aparece en las colecciones: DFA. Artículos del Departamento de Física Aplicada

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