Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122112
Monte Carlo study of kink effect in Isolated-Gate InAs/AlSb High Electron Mobility Transistors: Profile on PlumX
Title: Monte Carlo study of kink effect in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Authors: Vasallo, Beatriz G.
Rodilla, Helena
González Sánchez, Tomás
Lefebvre, Eric
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
Keywords: InAs HEMTs
Monte Carlo method
Impact Ionization
Kink effect
Issue Date: 2010
Citation: Vasallo, B.G. et al. (2010). Monte Carlo study of kink effect in Isolated-Gate InAs/AlSb High Electron Mobility Transistors. Journal of Applied Physics 108, 094505.
Abstract: A semiclassical 2D ensemble Monte Carlo simulator is used to perform a physical microscopic analysis of kink effect in InAs/AlSb High Electron Mobility Transistors (HEMTs). Due to the small bandgap of InAs, these devices are very susceptible to suffer impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. The results indicate that, for high enough VDS, holes generated by impact ionization tend to pile up in the buffer (at the gate-drain side) due to the valence-band energy barrier between the buffer and the channel. Due to this accumulation of positive charge the channel is further opened and ID increases, leading to the kink effect in the I-V characteristics and even to the device breakdown. The microscopic understanding of this phenomenon provides useful information for a design optimization of kink-effect-free InAs HEMTs.
URI: http://hdl.handle.net/10366/122112
ISSN: 0021-8979
Appears in Collections:DFA. Artículos del Departamento de Física Aplicada

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