Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122117
Analysis of noise spectra in GaAs and GaN Schottky barrier diodes: Profile on PlumX
Title: Analysis of noise spectra in GaAs and GaN Schottky barrier diodes
Authors: Pardo Santos, Diego
Grajal de la Fuente, Jesús
Pérez Santos, María Susana
Mencía, Beatriz
Mateos López, Javier
González Sánchez, Tomás
Keywords: Schottky diodes
Monte Carlo method
Noise
Issue Date: 2011
Citation: Pardo, D. (2011). Analysis of noise spectra in GaAs and GaN Schottky barrier diodes. Semicond. Sci Technol. 26, 055023 [1-11].
Abstract: The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Schottky barrier diodes operating under static and time varying conditions. We show the influence of the structure of the diode and working regimes on the noise spectrum of the diodes. Besides, the paper evaluates the capabilities of published analytical models to describe the noise spectra in Schottky diodes under time varying conditions. This is a further step towards the development of a design tool that integrates both the electrical response and the intrinsic noise generated in the devices.
URI: http://hdl.handle.net/10366/122117
ISSN: 0268-1242
Appears in Collections:DFA. Artículos del Departamento de Física Aplicada

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