Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122118
Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability: Profile on PlumX
Title: Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability
Authors: Pérez Santos, María Susana
Mateos López, Javier
González Sánchez, Tomás
Keywords: Nanodevices
Monte Carlo method
Gunn Oscillations
Terahertz
Issue Date: 2011
Citation: Pérez, S., Mateos, J., and González, T. (2011). Submillimeter-Wave Oscillations in Recessed InGaAs/InAlAs Heterostructures: Origin and Tunability. Acta Physica Polonica A 119, pp. 111-113 (2011)
Abstract: By means of an ensemble Monte Carlo simulator, the appeareance of THz oscillations in InAlAs/InGaAs slot diodes is predicted when the applied bias exceeds the threshold for intervalley transfer. Such high frequency is attained by the presence of a Gunn-like effect in the recess-to-drain region of the device channel whose dynamics is controlled by ballistic gamma valley electrons. In this work we explain the mechanism at the origin of this effect and also the influence of the bias conditions, delta-doping, recess-to-drain distance and recess length on the frequency of the ultra-fast Gunn like oscillations. The simulations show that a minimum value for the delta-doping is necessary to have enough carrier concentration under the recess and allow the oscillations to emerge. Finally, we show that shortening the devices (small recess and recess-to-drain lengths) increases of the oscillation frequency, so providing an interesting frequency tuneability of this THz source.
URI: http://hdl.handle.net/10366/122118
ISSN: 0587-4246
Appears in Collections:DFA. Artículos del Departamento de Física Aplicada

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