Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122122
Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors: Profile on PlumX
Title: Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Authors: Vasallo, Beatriz G.
Rodilla, Helena
González Sánchez, Tomás
Lefebvre, Eric
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
Keywords: InAs HEMTs
Monte Carlo method
Impact Ionization
Kink effect
Issue Date: 2011
Citation: Vasallo, B.G. et al. (2011). Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors. Acta Physica Polonica A 119, pp. 222-224.
Abstract: We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage VDS is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current ID increases, leading to the kink effect in the I–V characteristics.
URI: http://hdl.handle.net/10366/122122
ISSN: 0587-4246
Appears in Collections:DFA. Artículos del Departamento de Física Aplicada

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