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Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors: Profile on PlumX
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dc.contributor.authorVasallo, Beatriz G.-
dc.contributor.authorRodilla, Helena-
dc.contributor.authorGonzález Sánchez, Tomás-
dc.contributor.authorLefebvre, Eric-
dc.contributor.authorMoschetti, Giuseppe-
dc.contributor.authorGrahn, Jan-
dc.contributor.authorMateos López, Javier-
dc.date.accessioned2013-09-05T07:40:57Z-
dc.date.available2013-09-05T07:40:57Z-
dc.date.issued2011-
dc.identifier.citationVasallo, B.G. et al. (2011). Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors. Acta Physica Polonica A 119, pp. 222-224.es_ES
dc.identifier.issn0587-4246-
dc.identifier.urihttp://hdl.handle.net/10366/122122-
dc.description.abstractWe perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage VDS is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current ID increases, leading to the kink effect in the I–V characteristics.es_ES
dc.description.sponsorshipROOTHz (FP7-243845)es_ES
dc.language.isoenges_ES
dc.rightsinfo:eu-repo/semantics/openAccess-
dc.subjectInAs HEMTses_ES
dc.subjectMonte Carlo methodes_ES
dc.subjectImpact Ionizationes_ES
dc.subjectKink effectes_ES
dc.titleMonte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistorses_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.typeinfo:eu-repo/semantics/articlees_ES
dc.rights.licenseCC Reconocimiento - No comercial - Sin obras derivadas 3.0 España-
dc.subject.UNESCOMaterias::Investigación::22 Físicaes_ES
Aparece en las colecciones: DFA. Artículos del Departamento de Física Aplicada

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