Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/122136
Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs: Profile on PlumX
Title: Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs
Authors: Rodilla, Helena
González Sánchez, Tomás
Moschetti, Giuseppe
Grahn, Jan
Mateos López, Javier
Keywords: InAs HEMTs
Monte Carlo method
Noise
Issue Date: 2011
Citation: Rodilla, H. et al. (2011). Monte Carlo study of the noise performance of isolated. Semicond. Sci Technol. 27, 015008.
Abstract: In this work, the extrinsic dynamic behaviour and noise performance of a 225 nm isolated-gate InAs/AlSb HEMT have been studied by means of Monte Carlo simulations. A very good agreement with experimental results has been achieved for fT. Discrepancies between experimental and simulated fmax have been observed and attributed to the experimental frequency dispersion of gd and Cds. The simulations of the intrinsic and extrinsic noise parameters indicate an excellent performance for this device (Fmin=0.3 dB@10 GHz) even if we confirm that the presence of the native oxide under the gate induces an significant decrease in fT and fmax of around 20%, together with an increase of noise figure and noise resistance.
URI: http://hdl.handle.net/10366/122136
Appears in Collections:DFA. Artículos del Departamento de Física Aplicada

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