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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations: Profile on PlumX
Título : Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
Autor(es) : Millithaler, Jean Francois
Íñiguez-de-la-Torre, Ignacio
Íñiguez de la Torre, Ana
González Sánchez, Tomás
Sangaré, Paul
Ducournau, Guillaume
Gaquiere, Christophe
Mateos López, Javier
Palabras clave : Monte Carlo method
Gunn oscillations
GaN diodes
Terahertz
Fecha de publicación : 2014
Editor : American Institute of Physics
Citación : J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos; Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations; Applied Physics Letters 104, 073509 [1-4] (2014)
Resumen : In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode. This design, which reduces the effect of the surface-charges at the anode side, is the most favourable one for the onset of Gunn oscillations, which emerge at lower current levels and with lower threshold voltages as compared to the standard square geometry, thus enhancing the power efficiency of the self-switching diode as sub-millimeter wave emitters.
URI : http://hdl.handle.net/10366/130335
Aparece en las colecciones: GINEAF. Artículos del Grupo de Investigación en Nanodispositivos Electrónicos de Alta Frecuencia

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