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Título
Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations
Autor(es)
Materia
Monte Carlo method
Gunn oscillations
GaN diodes
Terahertz
Fecha de publicación
2014
Editor
American Institute of Physics
Citación
J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos; Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations; Applied Physics Letters 104, 073509 [1-4] (2014)
Resumen
In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, socalled
self-switching diodes, are presented. A particular geometry for the nanodiode is proposed,
referred as V-shape, where the width of the channel is intentionally increased as approaching the
anode. This design, which reduces the effect of the surface-charges at the anode side, is the most
favourable one for the onset of Gunn oscillations, which emerge at lower current levels and with
lower threshold voltages as compared to the standard square geometry, thus enhancing the power
efficiency of the self-switching diode as sub-millimeter wave emitters.
URI
DOI
http://dx.doi.org/10.1063/1.4866166
Colecciones
- GINEAF. Artículos [85]