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Título
Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes
Autor(es)
Materia
Noise
Gunn oscillations
InGaAs
Gunn diodes
Fecha de publicación
2014
Editor
American Institute of Physics
Citación
O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González; Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes; Applied Physics Letters 105, 113502 [1-4] (2014)
Resumen
In this work, the presence of anomalous low-frequency fluctuations during the initiation of higher
frequency oscillations in InGaAs-based Gunn planar diodes has been evidenced and investigated.
Accurate measurements showing the evolution of the power spectral density of the device with
respect to the applied voltage have been carried out. Such spectra have been obtained in the wide
frequency range between 10MHz and 43.5 GHz, simultaneously covering both the low-frequency
noise and the fundamental oscillation peak at some tens of GHz. This provides valuable information
to better understand how these fluctuations appear and how these are distributed in frequency.
For much higher frequency operation, such understanding can be utilized as a simple tool to predict
the presence of Gunn oscillations without requiring a direct detection.
URI
DOI
http://dx.doi.org/10.1063/1.4896050
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- GINEAF. Artículos [85]