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Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations: Profile on PlumX
Title: Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations
Authors: García Sánchez, Sergio
Íñiguez-de-la-Torre, Ignacio
García Pérez, Óscar Alberto
Mateos López, Javier
González Sánchez, Tomás
Pérez Santos, María Susana
Keywords: Heating
Thermal resistance
GaN diodes
Monte Carlo method
Issue Date: 2015
Publisher: IEEE
Citation: S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez; Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations: 2015 10th Spanish Conference on Electron Devices; DOI: 10.1109/CDE.2015.7087474
Abstract: In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperatureindependent thermal conductivity is considered, the obtained values of Rth depend on the geometry and substrate material, and are constant with the dissipated power (Pdiss). When a temperaturedependent thermal conductivity is needed to correctly reproduce the thermal behaviour of the device, Rth exhibits a strong dependence on Pdiss.
Appears in Collections:GINEAF. Artículos del Grupo de Investigación en Nanodispositivos Electrónicos de Alta Frecuencia

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