Please use this identifier to cite or link to this item: http://hdl.handle.net/10366/130681
Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature: Profile on PlumX
Title: Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature
Authors: García Pérez, Óscar Alberto
Mateos López, Javier
Pérez Santos, María Susana
González Sánchez, Tomás
Westlund, Andreas
Grahn, Jan
Keywords: Shot-noise suppression
Coulomb interaction
InGaAs diodes
Issue Date: 2015
Publisher: IEEE
Citation: Ó. García-Pérez, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González; Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature; 2015 International Conference on Noise and Fluctuations, ICNF 2015; DOI: 10.1109/ICNF.2015.7288539
Abstract: In this work, current noise measurements of submicron InGaAs/InAlAs recessed planar diodes are presented. The presence of a barrier in the potential profile under the recess may affect the propagation statistics of the carriers, which in turn would lead to suppressed shot noise levels. However, evidencing this noise suppression from the measurements is challenging, due to the undesired effects from the accesses and contact resistances. The presented results are provided as a starting point for a future de-embedding process to precisely determine the actual noise properties below the recess.
URI: http://hdl.handle.net/10366/130681
Appears in Collections:GINEAF. Artículos del Grupo de Investigación en Nanodispositivos Electrónicos de Alta Frecuencia

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