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Título
Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes
Autor(es)
Materia
Monte Carlo method
Capacitance
Schottky diodes
Fringing effects
Fecha de publicación
2016
Editor
IEEE
Citación
Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes - D. Moro-Melgar, A. Maestrini, J. Treuttel, L. Gatilova, T. González, B. G. Vasallo, and J. Mateos - IEEE Transactions on Electron Devices 63, 3900-3907 (2016)
Resumen
Nanometer scale planar Schottky barrier
diodes (SBDs) with realistic geometries have been studied
by means of a 2-D ensemble Monte Carlo simulator. The
topology of the devices studied in this paper is based in real
planar GaAs SBDs used in terahertz applications, such as
passive frequency mixing and multiplication, in which accurate
models for the diode capacitance are required. The intrinsic
capacitance of such small devices, which due to edge effects
strongly deviates from the ideal value, has been calculated.
In good agreement with the classical models, we have found
that the edge capacitance is independent of the properties of
the semiconductor beneath the contact and, as novel result, that
the presence of surface charges at the semiconductor dielectric
interface can reduce it almost 15%. We have finally provided a
compact model for the total capacitance of diodes with arbitrary
shape that could be easily implemented in design automation
software such as Advance Design System (ADS).
URI
DOI
10.1109/TED.2016.2601341
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- GINEAF. Artículos [85]