GINEAF. Artículos del Grupo de Investigación en Nanodispositivos Electrónicos de Alta Frecuencia : [45]   

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Registros de la colección (ordenados por Fecha de envío en orden Descendente): 1 al 20 de 45
AccesoFecha de publicaciónTítuloAutor(es)Tipo???itemlist.dc.date.*???
2018GaN nanodiode arrays with improved design for zero-bias sub-THz detectionSanchez-Martín, Héctor; Sánchez Martín, Sergio; Íñiguez-de-la-Torre, Ignacio; Pérez Santos, María Susana; Novoa López, Jose Antonio; Ducournau, Guillaume; Grimbert, Bertrand; Gaquiere, Christophe; González Sánchez, Tomás; Mateos López, Javierinfo:eu-repo/semantics/article2018-08-29T08:24:09Z; 2018-08-29T08:24:09Z; 2018
jul-2018Voltage controlled sub-THz detection with gated planar asymmetric nanochannelsSanchez Martín, Héctor; Mateos López, Javier; Novoa López, José Antonio; Delgado Notario, Juan Antonio; Yahya Moubarak, Meziani; Pérez Santos, María Susana; Theveneau, Hadrien; Ducournau, Guillaume; Gaquière, Christophe; González Sánchez, Tomás; Íñiguez-de-la-Torre, Ignacioinfo:eu-repo/semantics/article2018-07-31T11:03:24Z; 2018-07-31T11:03:24Z; 2018-07
2018Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysisGarcía Vasallo, Beatriz; González Sánchez, Tomás; Talbo, Vincent; Lechaux, Yoann; Wichmann, Nicola; Bollaert, Sylvain; Mateos López, Javierinfo:eu-repo/semantics/article2018-07-10T10:24:56Z; 2018-07-10T10:24:56Z; 2018
2017Monte Carlo calculation of In0.53Ga0.47As and InAs noise parametersKarishy, Slyman; Palermo, Christophe; Sabatini, Giulio; Marinchio, Hugues; Varani, Luca; Mateos López, Javier; González Sánchez, Tomásinfo:eu-repo/semantics/article2017-07-26T11:06:38Z; 2017-07-26T11:06:38Z; 2017
2017Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivitySánchez Martín, Héctor; Sánchez Martín, Sergio; García Pérez, Óscar Alberto; Pérez Santos, María Susana; Mateos López, Javier; González Sánchez, Tomás; Íñiguez-de-la-Torre, Ignacio; Gaquiere, Christopheinfo:eu-repo/semantics/article2017-07-26T07:48:45Z; 2017-07-26T07:48:45Z; 2017
2017Geometry and bias dependence of trapping effects in planar GaN nanodiodesSánchez Martín, Héctor; García Pérez, Óscar Alberto; Íñiguez-de-la-Torre, Ignacio; Pérez Santos, María Susana; Mateos López, Javier; González Sánchez, Tomás; Gaquiere, Christopheinfo:eu-repo/semantics/article2017-07-26T07:44:30Z; 2017-07-26T07:44:30Z; 2017
2016Electrical and Noise Modeling of GaAs Schottky Diode Mixers in the THz BandPardo Santos, Diego; Grajal de la Fuente, Jesús; Pérez Santos, María Susanainfo:eu-repo/semantics/article2016-10-06T11:34:04Z; 2016-10-06T11:34:04Z; 2016
2016Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky DiodesMoro-Melgar, Diego; Maestrini, Alain; Treuttel, Jeanne; Gatilova, Lina; González Sánchez, Tomás; García Vasallo, Beatriz; Mateos López, Javierinfo:eu-repo/semantics/article2016-10-06T11:33:32Z; 2016-10-06T11:33:32Z; 2016
2016Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar NanochannelsDaher, Carlos; Torres, Jeremie; Íñiguez-de-la-Torre, Ignacio; Nouvel, Philippe; Varani, Luca; Sangaré, Paul; Ducournau, Guillaume; Gaquiere, Christophe; Mateos López, Javier; González Sánchez, Tomásinfo:eu-repo/semantics/article2016-10-06T11:32:55Z; 2016-10-06T11:32:55Z; 2016
2016Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulationsGarcía Sánchez, Sergio; Íñiguez-de-la-Torre, Ignacio; Mateos López, Javier; González Sánchez, Tomás; Pérez Santos, María Susanainfo:eu-repo/semantics/article2016-10-06T11:32:03Z; 2016-10-06T11:32:03Z; 2016
2015Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodesGarcía Pérez, Óscar Alberto; Íñiguez-de-la-Torre, Ignacio; Pérez Santos, María Susana; Mateos López, Javier; González Sánchez, Tomás; Alimi, Yasaman; Song, Aimin M.info:eu-repo/semantics/article2016-10-05T16:01:11Z; 2016-10-05T16:01:11Z; 2015
2015Carrier Dynamics Probed by Noise in High-Frequency Electronic DevicesGonzález Sánchez, Tomásinfo:eu-repo/semantics/article2016-10-05T16:00:55Z; 2016-10-05T16:00:55Z; 2015
2015Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperatureGarcía Pérez, Óscar Alberto; Mateos López, Javier; Pérez Santos, María Susana; González Sánchez, Tomás; Westlund, Andreas; Grahn, Janinfo:eu-repo/semantics/article2016-10-05T16:00:38Z; 2016-10-05T16:00:38Z; 2015
2015Time-dependent physics of double-tunnel junctionsTalbo, Vincent; Mateos López, Javier; Retailleau, Sylvie; Dollfus, Philippe; González Sánchez, Tomásinfo:eu-repo/semantics/article2016-10-05T16:00:23Z; 2016-10-05T16:00:23Z; 2015
2015Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo SimulationsGarcía Sánchez, Sergio; Íñiguez-de-la-Torre, Ignacio; García Pérez, Óscar Alberto; Mateos López, Javier; González Sánchez, Tomás; Pérez Santos, María Susanainfo:eu-repo/semantics/article2016-10-05T15:59:44Z; 2016-10-05T15:59:44Z; 2015
2015Anomalous Low-Frequency Noise Increase at the Onset of Oscillations in Gunn DiodesGarcía Pérez, Óscar Alberto; Íñiguez-de-la-Torre, Ignacio; Pérez Santos, María Susana; Mateos López, Javier; González Sánchez, Tomás; Alimi, Yasaman; Song, Aimin M.info:eu-repo/semantics/article2016-10-05T15:58:55Z; 2016-10-05T15:58:55Z; 2015
2015Shot-noise suppression effects in InGaAs planar diodes at room temperatureGarcía Pérez, Óscar Alberto; Sánchez Martín, Héctor; Mateos López, Javier; Pérez Santos, María Susana; Westlund, Andreas; Grahn, Jan; González Sánchez, Tomásinfo:eu-repo/semantics/article2016-10-04T08:00:42Z; 2016-10-04T08:00:42Z; 2015
2015Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETsTalbo, Vincent; Mateos López, Javier; González Sánchez, Tomás; Lechaux, Y.; Wichmann, Nicolas; Bollaert, Sylvain; García Vasallo, Beatrizinfo:eu-repo/semantics/article2016-10-04T08:00:00Z; 2016-10-04T08:00:00Z; 2015
2015Temperature and surface traps influence on the THz emission from InGaAs diodesRodríguez Fernández, Alberto; Íñiguez-de-la-Torre, Ignacio; García Pérez, Óscar Alberto; González Sánchez, Sergio; Westlund, Andreas; Per-Ake, Nilsson; Grahn, Jan; González Sánchez, Tomás; Mateos López, Javier; Pérez Santos, María Susanainfo:eu-repo/semantics/article2016-10-04T07:58:25Z; 2016-10-04T07:58:25Z; 2015
2015Nonequilibrium transport in GaAs Schottky mixers at 2.5 THzPardo Santos, Diego; Grajal de la Fuente, Jesús; Pérez Santos, María Susanainfo:eu-repo/semantics/article2016-10-04T07:53:09Z; 2016-10-04T07:53:09Z; 2015
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