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oai:gredos.usal.es:10366/1221062026-01-21T10:22:15Zcom_10366_4531com_10366_4512com_10366_3823com_10366_4101com_10366_4055com_10366_3946col_10366_4532col_10366_4102

Kaushal, Vikas Íñiguez-de-la-Torre, Ignacio González Sánchez, Tomás Mateos López, Javier Lee, Bongmook Misra, Veena Margala, Martin 2013-09-04T06:39:36Z 2013-09-04T06:39:36Z 2012 V. Kaushal et al., "Effects of a High-k Dielectric on the Performance of III–V Ballistic Deflection Transistors," in IEEE Electron Device Letters, vol. 33, no. 8, pp. 1120-1122, Aug. 2012, doi: 10.1109/LED.2012.2197669. 0741-3106 http://hdl.handle.net/10366/122106 10.1109/LED.2012.2197669 This letter presents a first successful integration of a high-k dielectric, Al2O3, with III-V semiconductors in ballistic deflection transistors (BDT). The Al2O3 is deposited by means of atomic layer deposition allowing the formation of uniform layers along the walls of etched trenches. The BDT transfer characteristic shows a strong dependence on the dielectric permittivity of the material filling the etched trenches. The transconductance of the BDT is enhanced and shifted to lower gate bias when the Al2O3 is deposited in the trenches. Moreover, the ratio between output and leakage currents was also enhanced. eng https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivs 3.0 Unported Nanodevices Monte Carlo method Ballistic transport Effects of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors info:eu-repo/semantics/article