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oai:gredos.usal.es:10366/1221172026-01-12T13:37:28Zcom_10366_4531com_10366_4512com_10366_3823com_10366_4101com_10366_4055com_10366_3946col_10366_4532col_10366_4102

Pardo Santos, Diego Grajal de la Fuente, Jesús Pérez Santos, María Susana Mencía, Beatriz Mateos López, Javier González Sánchez, Tomás 2013-09-04T11:32:57Z 2013-09-04T11:32:57Z 2011 Pardo, D. (2011). Analysis of noise spectra in GaAs and GaN Schottky barrier diodes. Semicond. Sci Technol. 26, 055023 [1-11]. 0268-1242 http://hdl.handle.net/10366/122117 10.1088/0268-1242/26/5/055023 The Monte Carlo method is applied in this paper to characterize the noise spectra of GaAs and GaN Schottky barrier diodes operating under static and time varying conditions. We show the influence of the structure of the diode and working regimes on the noise spectrum of the diodes. Besides, the paper evaluates the capabilities of published analytical models to describe the noise spectra in Schottky diodes under time varying conditions. This is a further step towards the development of a design tool that integrates both the electrical response and the intrinsic noise generated in the devices. ROOTHz (FP7-243845) eng Attribution-NonCommercial-NoDerivs 3.0 Unported https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Schottky diodes Monte Carlo method Noise 22 Física Analysis of noise spectra in GaAs and GaN Schottky barrier diodes info:eu-repo/semantics/article info:eu-repo/semantics/article https://iopscience.iop.org/article/10.1088/0268-1242/26/5/055023