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Vasallo, Beatriz G. Rodilla, Helena González Sánchez, Tomás Lefebvre, Eric Moschetti, Giuseppe Grahn, Jan Mateos López, Javier 2013-09-05T07:40:57Z 2013-09-05T07:40:57Z 2011 Vasallo, B.G. et al. (2011). Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors. Acta Physica Polonica A 119, pp. 222-224. 0587-4246 http://hdl.handle.net/10366/122122 10.12693/APhysPolA.119.222 We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage VDS is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current ID increases, leading to the kink effect in the I–V characteristics. ROOTHz (FP7-243845) eng Attribution-NonCommercial-NoDerivs 3.0 Unported https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess InAs HEMTs Monte Carlo method Impact Ionization Kink effect 22 Física Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors info:eu-repo/semantics/article info:eu-repo/semantics/article