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oai:gredos.usal.es:10366/1303342026-01-21T10:12:03Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532

Sergio, García Sánchez Íñiguez-de-la-Torre, Ignacio Mateos López, Javier González Sánchez, Tomás 2016-09-27T08:04:52Z 2016-09-27T08:04:52Z 2014 S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes Journal of Applied Physics 115, 044510 [1-7] (2014) http://hdl.handle.net/10366/130334 10.1063/1.4863399 In this work, we report on Monte Carlo simulations to study the capability to generate Gunn oscillations of diodes based on InP and GaN with around 1 lm active region length. We compare the power spectral density of current sequences in diodes with and without notch for different lengths and two doping profiles. It is found that InP structures provide 400 GHz current oscillations for the fundamental harmonic in structures without notch and around 140 GHz in notched diodes. On the other hand, GaN diodes can operate up to 300 GHz for the fundamental harmonic, and when the notch is effective, a larger number of harmonics, reaching the Terahertz range, with higher spectral purity than in InP diodes are generated. Therefore, GaN-based diodes offer a high power alternative for sub-millimeter wave Gunn oscillations. European Commision (EC). Funding FP7/SP1/ICT. Project Code: 243845 application/pdf eng American Institute of Physics Attribution-NonCommercial-NoDerivs 3.0 Unported https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Gunn diodes Monte Carlo method InP GaN Terahertz Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes info:eu-repo/semantics/article https://doi.org/10.1063/1.4863399 TEC2010-15413 SA052U13