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García Sánchez, Sergio Íñiguez-de-la-Torre, Ignacio García Pérez, Óscar Alberto Mateos López, Javier González Sánchez, Tomás Sangaré, Paul Gaquiere, Christophe Pérez Santos, María Susana 2016-09-30T08:06:26Z 2016-09-30T08:06:26Z 2015 S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez; Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method; Semiconductor Science and Technology 30, 035001 [1-8] (2015) http://hdl.handle.net/10366/130631 10.1088/0268-1242/30/3/035001 In this contribution we present the results from the simulation of an AlGaN/GaN heterostructure diode by means of a Monte Carlo tool where thermal effects have been included. Two techniques are investigated: (i) a thermal resistance method (TRM), and (ii) an advanced electro-thermal model (ETM) including the solution of the steady-state heat diffusion equation. Initially, a systematic study at constant temperature is performed in order to calibrate the electronic model. Once this task is performed, the electro-thermal methods are coupled with the Monte Carlo electronic simulations. For the TRM, several values of thermal resistances are employed, and for the ETM method, the dependence on the thermal-conductivity, thickness and die length is analyzed. It is found that the TRM with well-calibrated values of thermal resistances provides a similar behavior to ETM simulations under the hypothesis of constant thermal conductivity. Our results are validated with experimental measurements finding the best agreement when the ETM is used with a temperature-dependent thermal conductivity. eng https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivs 3.0 Unported Electro-thermal simulation Heating GaN Monte Carlo method Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method info:eu-repo/semantics/article