2026-09-15T05:42:28Zhttps://gredos.usal.es/oai/requestoai:gredos.usal.es:10366/1306522025-04-30T20:41:21Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532
Shot-noise suppression effects in InGaAs planar diodes at room temperature
García Pérez, Óscar Alberto
Sánchez Martín, Héctor
Mateos López, Javier
Pérez Santos, María Susana
Westlund, Andreas
Grahn, Jan
González Sánchez, Tomás
Shot noise
InGaAs diodes
Noise suppression
In this work, the noise characteristics of InGaAs planar diodes are studied. The
presence of a recessed region originates a barrier in the potential profile, which can modulate
the passage of ballistic carriers along the structure. This effect, in turn, may lead to suppressed
levels of noise with respect to the full Poissonian value due to Coulomb interaction. With the
aim of evidencing such phenomenon, the noise properties of a set of devices with different
dimensions have been measured at room temperature. Some evidence of potential shot-noise
suppression is observed in the results, but the undesired effect of resistive contacts and
accesses has been found to be a limiting factor to quantify the suppression accurately.
2016-10-04
2016-10-04
2015
info:eu-repo/semantics/article
Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González; Shot-noise suppression effects in InGaAs planar diodes at room temperature Journal of Physics: Conference Series 647, 012061 [1-4] (2015)
http://hdl.handle.net/10366/130652
10.1088/1742-6596/647/1/012061
eng
TEC2013-41640-R
SA052U13
https://creativecommons.org/licenses/by-nc-nd/3.0/
info:eu-repo/semantics/openAccess
Attribution-NonCommercial-NoDerivs 3.0 Unported
Institute of Physics Publishing