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oai:gredos.usal.es:10366/1306792025-04-30T20:41:22Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532

Evaluation of the Thermal Resistance in GaN-Diodes by means of Electro-Thermal Monte Carlo Simulations García Sánchez, Sergio Íñiguez-de-la-Torre, Ignacio García Pérez, Óscar Alberto Mateos López, Javier González Sánchez, Tomás Pérez Santos, María Susana Heating Thermal resistance GaN diodes Monte Carlo method In this paper we use an electro-thermal method [solver of the heat-flux equation coupled with an ensemble Monte Carlo (MC) simulator] to extract the value of the thermal resistance, Rth, in diodes consisting in un-gated Al0.27Ga0.73N/GaN heterostructures. Different substrates (polycrystalline diamond - PCD, diamond, silicon and sapphire), and die dimensions will be analysed. When a temperatureindependent thermal conductivity is considered, the obtained values of Rth depend on the geometry and substrate material, and are constant with the dissipated power (Pdiss). When a temperaturedependent thermal conductivity is needed to correctly reproduce the thermal behaviour of the device, Rth exhibits a strong dependence on Pdiss. 2016-10-05T15:59:44Z 2016-10-05T15:59:44Z 2015 info:eu-repo/semantics/article S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez; Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations: 2015 10th Spanish Conference on Electron Devices; DOI: 10.1109/CDE.2015.7087474 http://hdl.handle.net/10366/130679 10.1109/CDE.2015.7087474 eng TEC2013-41640-R SA052U13 https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivs 3.0 Unported IEEE