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oai:gredos.usal.es:10366/1306972025-04-30T20:41:23Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532

Daher, Carlos Torres, Jeremie Íñiguez-de-la-Torre, Ignacio Nouvel, Philippe Varani, Luca Sangaré, Paul Ducournau, Guillaume Gaquiere, Christophe Mateos López, Javier González Sánchez, Tomás 2016-10-06T11:32:55Z 2016-10-06T11:32:55Z 2016 Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels - C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González. - IEEE Transactions on Electron Devices 63, 353- 359 (2016) http://hdl.handle.net/10366/130697 10.1109/TED.2015.2503987 An experimental demonstration of GaN-based asymmetric nanodiodes as direct and heterodyne detectors up to 0.69 THz has been performed at room temperature. Responsivities of 2 and 0.3 V/W in a free-space configuration were obtained at 0.30 and 0.69 THz, respectively. An intermediate frequency (IF) signal has been measured up to 40 and 13 GHz in the same frequency ranges. The characterization of the nanodiodes as mixers did not show any deviation from linearity between the RF input power and the IF output. Monte Carlo simulations, used to estimate nanodevice intrinsic conversion losses of 27 dB at 0.69 THz, have confirmed these results. eng https://creativecommons.org/licenses/by-nc-nd/3.0/ info:eu-repo/semantics/openAccess Attribution-NonCommercial-NoDerivs 3.0 Unported THz detectors GaN diodes Monte Carlo method Room Temperature Direct and Heterodyne Detection of 0.28–0.69-THz Waves Based on GaN 2-DEG Unipolar Nanochannels info:eu-repo/semantics/article