2026-09-15T15:03:43Zhttps://gredos.usal.es/oai/request

oai:gredos.usal.es:10366/1471432025-04-30T20:41:13Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532

Orfao, Beatriz García Vasallo, Beatriz Pérez Santos, María Susana Mateos López, Javier Moro-Melgar, Diego Zaknoune, M. González Sánchez, Tomás 2021 [EN]The influence of passivation on the edge effects (EEs) present in the capacitance–voltage (C–V ) characteristics of GaN Schottky barrier diodes (SBDs) with realistic geometry is analyzed by means of Monte Carlo simulations. The enhancement of the performance of SBDs as frequency multipliers is based on the optimization of the nonlinearity of the C–V curve, where EEs, strongly influenced by the dielectric passivation of the diode, play a significant role and must be carefully considered. The extra capacitance associated with EEs is affected by the presenceof surface charges at the semiconductor/dielectric interface,which is considered bymeans of a self-consistent model in which the local value of the surface charge is updated according to the surrounding electron density. Our results indicate that, in realistic SBD geometries, a higher dielectric constant of the passivationmaterial leads tomore pronounced EEs. The thickness of the dielectric and the lateral extension of the epilayer are also important parameters to be taken into account when dealing with EEs. application/pdf http://hdl.handle.net/10366/147143 eng IEEE 2203 Electrónica Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes info:eu-repo/semantics/article TEXT Gredos. Repositorio Documental de la Universidad de Salamanca Hispana