2026-09-16T02:40:40Zhttps://gredos.usal.es/oai/request

oai:gredos.usal.es:10366/1471442025-04-30T20:41:13Zcom_10366_4531com_10366_4512com_10366_3823col_10366_4532

Pérez Martín, Elsa Íñiguez de la Torre Mulas, Ignacio González Sánchez, Tomás Gaquiere, Christophe Mateos López, Javier 2021-09-13T09:55:36Z 2021-09-13T09:55:36Z 2021 Pérez-Martín, E., Íñiguez-de-la-Torre, I., González, T., Gaquière, C. and Mateos, J. (2021). Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes. 2021 13th Spanish Conference on Electron Devices (CDE), pp. 90-93, doi: 10.1109/CDE52135.2021.9455737. http://hdl.handle.net/10366/147144 10.1109/CDE52135.2021.9455737 [EN]In this work, with the help of a semi-classical twodimensional Monte Carlo (MC) simulator, we study the DC current-voltage curves of Self-Switching Diodes (SSDs) fabricated on an AlGaN/GaN heterostructure from 100 K up to room temperature. Due to the very narrow channel of the SSDs, the presence of surface effects plays a key role not only on their DC behavior but also on their RF detection performance. The evolution with temperature of the negative surface charge density σ at the etched sidewalls of the SSD is the key quantity to explain the measurements. At 300 K, MC simulations with a constant value of σ are able to replicate very satisfactorily the experiments. However, to reproduce the shape of the I-V curve at low temperatures, a more realistic approach, where σ depends not only on T, but also on the applied bias V, is necessary. Spanish MINECO and FEDER through project TEC2017-83910-R and Junta de Castilla y León and FEDER through project SA254P18 application/pdf eng IEEE Attribution-NonCommercial-NoDerivatives 4.0 Internacional http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/openAccess Monte Carlo simulation Self-switching diodes Gallium Nitride Surface effects Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion SA254P18 TEC2017-83910-R 2021 13th Spanish Conference on Electron Devices (CDE) 90 93