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Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs Calvo Gallego, Jaime Delgado Notario, Juan Antonio Ferrando-Bataller, Miguel Fobelets, Kristel Meziani, Yahya Moubarak Velázquez Pérez, Jesús Enrique Electromagnetic simulation Scientific computing Terahertz (THz) THz Radiation Sub-THz Radiation Coupling n-channel strained-silicon MODFETs [EN]We report on a study of the coupling of electromagnetic radiation to a strained-silicon MODFETs used as sub-THz terahertz detector. In particular, the effect of the polarization of the incoming beam as well as the role of the bonding wires on the photoresponse generated were addressed. Two tones were considered: 0.15 and 0.30THz. Results show that the device is sensitive to the beam polarization, especially when the beam polarization is perpendicular to the transistor channel under excitation at 0.15THz. We also demonstrated that the bonding wires play a preponderant role in the coupling of the incoming radiation to the channel of the FET under excitation at 0.15THz while they have a minor role at higher frequencies (0.3THz). 2024-11-04T09:47:00Z 2024-11-04T09:47:00Z 2024-11-04T09:47:00Z 2021-08-29 info:eu-repo/semantics/article . Calvo-Gallego, J. A. Delgado-Notario, M. Ferrando-Bataller, K. Fobelets, Y. M. Meziani and J. E. Velázquez-Pérez, "Electromagnetic Simulation of the Sub-THz Radiation Coupling to n-channel strained-silicon MODFETs," 2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Chengdu, China, 2021, pp. 1-2, doi: 10.1109/IRMMW-THz50926.2021.9566877. 2162-2027 http://hdl.handle.net/10366/160468 10.1109/IRMMW-THz50926.2021.9566877 eng https://doi.org/10.1109/IRMMW-THZ50926.2021.9566877 http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/embargoedAccess Attribution-NonCommercial-NoDerivatives 4.0 Internacional