2026-08-26T22:56:58Zhttps://gredos.usal.es/oai/request

oai:gredos.usal.es:10366/1622352025-04-30T19:46:10Zcom_10366_4101com_10366_4055com_10366_3946com_10366_3823col_10366_4102

Delgado Notario, Juan Antonio Clericò, Vito Díez Fernández, Enrique Velázquez Pérez, Jesús Enrique Taniguchi, Takashi Watanabe, Kenji Otsuji, Taiichi Meziani, Y. M. 2025-01-22T08:55:46Z 2025-01-22T08:55:46Z 2020 J. A. Delgado-Notario, V. Clericò, E. Diez, J. E. Velázquez-Pérez, T. Taniguchi, K. Watanabe, T. Otsuji, Y. M. Meziani; Asymmetric dual-grating gates graphene FET for detection of terahertz radiations. APL Photonics 1 June 2020; 5 (6): 066102. https://doi.org/10.1063/5.0007249 2378-0967 http://hdl.handle.net/10366/162235 10.1063/5.0007249 2378-0967 [EN]A graphene-based field-effect-transistor with asymmetric dual-grating gates was fabricated and characterized under excitation of terahertz radiation at two frequencies: 0.15 THz and 0.3 THz. The graphene sheet was encapsulated between two flakes of h-BN and placed on a highly doped SiO2/Si substrate. An asymmetric dual-grating gate was implemented on the h-BN top flake. Even though no antenna was used to couple the incoming radiation, a clear gate-bias-dependent photocurrent was measured under excitation at 0.3 THz up to room temperature. We subsequently demonstrated that the device can be used for terahertz sensing and inspection of hidden metallic objects at room temperature. eng info:eu-repo/semantics/openAccess Asymmetric dual-grating gates graphene FET for detection of terahertz radiations info:eu-repo/semantics/article