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oai:gredos.usal.es:10366/1690702026-01-21T01:02:41Zcom_10366_4386com_10366_4349com_10366_3946com_10366_3823col_10366_4387

2026-01-20T13:22:30Z urn:hdl:10366/169070 Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect Abidi, El Hadj Clericò, Vito Calvo Gallego, Jaime Taniguchi, T. Watanabe, K. Otsuji, T. Velázquez Pérez, Jesús Enrique Meziani, Yahya Moubarak Boron Graphene Field effect transistors Terahertz radiation Detectors Logic gates Photoconductivity Gratings [EN]Asymmetric dual grating gates graphene field effect transistor (FET) was fabricated and characterized at two tones terahertz frequency 0.15 & 0.3 THz at 10K. The channel of the device was a monolayer graphene placed between two sheets of hexagonal boron nitride h-BN. Enhancement of the measured photocurrent was observed at a bias of different signs between the top and the back gates. This behavior was associated with the ratchet effect that is induced by both biasing and THz radiation. This opens the way for the development of new highly efficient detectors of terahertz radiation for different applications. 2026-01-20T13:22:30Z 2026-01-20T13:22:30Z 2026-01-14 9999-12-31 info:eu-repo/semantics/article E. Abidi et al., "Terahertz rectification up to 2.5 THz by using an Asymmetric Dual-Grating Gate GFETs via ratchet effect," 2025 50th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Helsinki, Finland, 2025, pp. 1-2, doi: 10.1109/IRMMW-THz61557.2025.11319891. 979-8-3503-7883-2 979-8-3503-7884-9 2162-2035 2162-2027 http://hdl.handle.net/10366/169070 10.1109/IRMMW-THz61557.2025.11319891 eng https://doi.org/10.1109/IRMMW-THz61557.2025.11319891 PID2021-126483OB-I00 PID2022-136869NB-C33 21H04546 http://creativecommons.org/licenses/by-nc-nd/4.0/ info:eu-repo/semantics/embargoedAccess Attribution-NonCommercial-NoDerivatives 4.0 Internacional IEEE