2026-08-28T06:36:10Zhttps://gredos.usal.es/oai/request

oai:gredos.usal.es:10366/192192026-01-21T11:02:36Zcom_10366_4531com_10366_4512com_10366_3823com_10366_4101com_10366_4055com_10366_3946col_10366_4532col_10366_4102

Mateos López, Javier García Vasallo, Beatriz Pardo Collantes, Daniel González Santos, Tomás 2005 By means of the microscopic transport description supplied by a semiclassical two-dimensional Monte Carlo simulator, we provide an in depth explanation of the operation sbased on electrostaticeffectsd of the nanoscale unipolar rectifying diode, so called self-switching diode, recently proposed in A. M. Song, M. Missous, P. Omling, A. R. Peaker, L. Samuelson, and W. Seifert, Appl. Phys.Lett. 83, 1881 s2003d. The simple downscaling of this device and the intrinsically high electron velocity of InGaAs channels allows one to envisaging the fabrication of structures working in the THz range. We analyze the high-frequency performance of the diodes and provide design considerations for the optimization of the downscaling process. En este trabajo, mediante un simulador Monte Carlo semiclásico 2D, se analizan en detalle las bases de funcionamiento de un diodo semiconductor nanométrico unipolar cuyo comportamiento rectificador es debido a efectos electrostáticos. Por su fácil nanoescalado y la alta velocidad de los electrones en su interior cuando los diodos se fabrican con canales de InGaAs, cabe esperar que estos dispositivos sean capaces de trabajar en el rango de los THz. application/pdf http://hdl.handle.net/10366/19219 eng American Institute of Physics (Nueva York, Estados Unidos) Operation and high-frequency performance of nanoscale unipolarrectifying diodes info:eu-repo/semantics/article 3 p. TEXT Gredos. Repositorio Documental de la Universidad de Salamanca Hispana